NVTFS5116PLTWG【PDF 1/6 页】MOSFET P-CH 60V 14A 8WDFN

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Sheet目录494

[1页]2页 3页 4页 5页

NVTFS5116PL

Power MOSFET

? 60 V, ? 14 A, 52 m W , Single P ? Channel

Features

? Small Footprint (3.3 x 3.3 mm) for Compact Design

? Low R DS(on) to Minimize Conduction Losses

? Low Capacitance to Minimize Driver Losses

? NVTFS5116PLWF ? Wettable Flanks Product

? AEC ? Q101 Qualified and PPAP Capable

? These Devices are Pb ? Free and are RoHS Compliant

MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

V (BR)DSS

? 60 V

http://onsemi.com

R DS(on) MAX

52 m W @ ? 10 V

72 m W @ ? 4.5 V

I D MAX

? 14 A

Parameter

Symbol

Value

Unit

Drain ? to ? Source Voltage

Gate ? to ? Source Voltage

V DSS

V GS

? 60

± 20

P ? Channel MOSFET

D (5 ? 8)

2, 3, 4) T mb = 100 ° C

Power Dissipation

T mb = 25 ° C

R Y J ? mb (Notes 1, 2, 3)

3, 4) T A = 100 ° C

Power Dissipation

T A = 25 ° C

R q JA (Notes 1, 3)

Continuous Drain Cur- T mb = 25 ° C

rent R Y J ? mb (Notes 1,

Steady

State

T mb = 100 ° C

Continuous Drain Cur- T A = 25 ° C

rent R q JA (Notes 1 &

Steady

State

T A = 100 ° C

Pulsed Drain Current T A = 25 ° C, t p = 10 m s

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain ? to ? Source Avalanche

Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,

I L(pk) = 30 A, L = 0.1 mH, R G = 25 W )

I D

P D

I D

P D

I DM

T J , T stg

I S

E AS

? 14

? 10

? 6

? 4

3.2

1.6

? 126

? 55 to

+175

? 17

° C

G (4)

WDFN8

( m 8FL)

CASE 511AB

XXXX

S (1,2,3)

MARKING DIAGRAM

S D

S XXXX D

S AYWW G D

G G D

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb ? Free Package

Lead Temperature for Soldering Purposes

(1/8 ″ from case for 10 s)

T L

260

° C

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Junction ? to ? Mounting Board (top) ? Steady

State (Note 2 and 3)

Junction ? to ? Ambient ? Steady State (Note 3)

Symbol

R Y J ? mb

R q JA

Value

7.2

Unit

° C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

? Semiconductor Components Industries, LLC, 2013

May, 2013 ? Rev. 2

Publication Order Number:

NVTFS5116PL/D

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